Depth profiles of the Fermi level at an amorphous-carbon...

Diamond and Related Materials 2006 / 9 Vol. 15; Iss. 9

Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

Ishizaki, Takahiro, Saito, Nagahiro, Ohta, Riichiro, Takai, Osamu
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Volume:
15
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2005.10.001
Date:
September, 2006
File:
PDF, 131 KB
english, 2006
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