A study of carrier lifetime in silicon by laser-induced...

Solid-State Electronics 1992 Vol. 35; Iss. 3

A study of carrier lifetime in silicon by laser-induced absorption: A perpendicular geometry measurement

V. Grivickas, J. Linnros, A. Vigelis, J. Šečkus, J.A. Tellefsen
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Volume:
35
Year:
1992
Language:
english
Pages:
12
DOI:
10.1016/0038-1101(92)90233-3
File:
PDF, 838 KB
english, 1992
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