Arsenic ion implantation through Mo and Mo silicide layers...

Solid-State Electronics 1992 Vol. 35; Iss. 7

Arsenic ion implantation through Mo and Mo silicide layers for shallow junction formation

R. Angelucci, S. Solmi, A. Armigliato, E. Gabilli, D. Govoni, M. Merli, A. Poggi
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Volume:
35
Year:
1992
Language:
english
Pages:
7
DOI:
10.1016/0038-1101(92)90323-5
File:
PDF, 1.38 MB
english, 1992
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