A charge based capacitance model for high electron mobility...

Solid-State Electronics 1995 Vol. 38; Iss. 4

A charge based capacitance model for high electron mobility transistors

Hyungkeun Ahn, M. El Nokali
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
38
Year:
1995
Language:
english
Pages:
3
DOI:
10.1016/0038-1101(94)00208-w
File:
PDF, 315 KB
english, 1995
Conversion to is in progress
Conversion to is failed