An analytical model for hot-carrier-induced degradation of...

Solid-State Electronics 1995 Vol. 38; Iss. 6

An analytical model for hot-carrier-induced degradation of deep-submicron n-channel LDD MOSFETs

Jung-Suk Goo, Young-Gwan Kim, Hyeokjae L'Yee, Ho-Yup Kwon, Hyungsoon Shin
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Volume:
38
Year:
1995
Language:
english
Pages:
6
DOI:
10.1016/0038-1101(94)00221-z
File:
PDF, 595 KB
english, 1995
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