Conduction behaviour of low-temperature (≤600°C)...

Conduction behaviour of low-temperature (≤600°C) polysilicon TFTs with an in situ drain doping level

L Pichon, F Raoult, O Bonnaud, H Sehil, D Briand
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Volume:
38
Year:
1995
Language:
english
Pages:
7
DOI:
10.1016/0038-1101(94)00277-m
File:
PDF, 682 KB
english, 1995
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