Investigation of leakage current behaviour of Schottky...

Solid-State Electronics 1995 Vol. 38; Iss. 10

Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model

P Ellrodt, W Brockerhoff, F.J Tegude
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Volume:
38
Year:
1995
Language:
english
Pages:
6
DOI:
10.1016/0038-1101(94)00298-t
File:
PDF, 618 KB
english, 1995
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