Valence-subband level crossing in GaAs/GaAsP...

Solid-State Electronics 1994 Vol. 37; Iss. 4-6

Valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures observed by circularly polarized photoluminescence excitation spectroscopy

Hiroyuki Yaguchi, Kazunobu Ota, Yutaka Takahashi, Koji Muraki, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito
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Volume:
37
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0038-1101(94)90325-5
File:
PDF, 276 KB
english, 1994
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