Strained InAs/Ga0.47In0.53As quantum-well heterostructures...

Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications

Eric Tournié, Patrick Grunberg, Catherine Fouillant, Alexei Baranov, André Joullié, Klaus H. Ploog
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Volume:
37
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0038-1101(94)90415-4
File:
PDF, 256 KB
english, 1994
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