Quantized conductance in a SiSi0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena
D Többen, D.A Wharam, G Abstreiter, J.P Kotthaus, F SchäfflerVolume:
40
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0038-1101(95)00298-7
File:
PDF, 423 KB
english, 1996