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C-V and G-V characterization of in-situ fabricated Ga2O3GaAs interfaces for inversion/accumulation device and surface passivation applications
M. Passlack, M. Hong, J.P. MannaertsVolume:
39
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0038-1101(96)00006-8
File:
PDF, 320 KB
english, 1996