Properties of nanopillar structures prepared by dry etching...

Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth

Polyakov, A.Y., Jeon, Dae-Woo, Govorkov, A.V., Smirnov, N.B., Sokolov, V.N., Kozhukhova, E.A., Yakimov, E.B., Lee, In-Hwan
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Volume:
554
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2012.11.194
Date:
March, 2013
File:
PDF, 1.01 MB
english, 2013
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