A rigorous simulation based study of gate misalignment...

Superlattices and Microstructures 2013 / 08 Vol. 60

A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs

Sarangi, Santunu, Bhushan, Shiv, Santra, Abirmoya, Dubey, Sarvesh, Jit, Satyabrata, Tiwari, Pramod Kumar
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Volume:
60
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2013.05.009
Date:
August, 2013
File:
PDF, 2.56 MB
english, 2013
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