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Characteristics of InGaN light emitting diode depending on Si-doping on InGaN layers below quantum wells
Cho, Sung Nae, Kim, Kyu SangVolume:
13
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2013.04.008
Date:
September, 2013
File:
PDF, 972 KB
english, 2013