OBIC analysis for 1.3 kV 6H–SiC p+n planar bipolar diodes...

Diamond and Related Materials 2004 / 9 Vol. 13; Iss. 9

OBIC analysis for 1.3 kV 6H–SiC p+n planar bipolar diodes protected by Junction Termination Extension

Raynaud, C, Wang, S.-R, Planson, D, Lazar, M, Chante, J.-P
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Volume:
13
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2004.02.012
Date:
September, 2004
File:
PDF, 537 KB
english, 2004
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