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The structure and electrical characteristics of Si/Ge heterojunctions: I: Imperfections in the Si-Ge heteroepitaxial system obtained by deposition of germanium from a molecular beam
V.N. Vasilevskaya, R.V. Konakova, N.V. Osadchaya, Yu.A. Tkhorik, N.M. Torchun, Yu.M. ShvartsVolume:
55
Year:
1978
Language:
english
Pages:
6
DOI:
10.1016/0040-6090(78)90053-6
File:
PDF, 1.49 MB
english, 1978