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GaAs/Ge3N4/Al structures and mis field-effect transistors based on them
G.D. Bagratishvili, R.B. Dzhanelidze, N.I. Kurdiani, Yu.I. Pashintsev, O.V. Saksaganski, V.A. SkorikovVolume:
56
Year:
1979
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(79)90065-8
File:
PDF, 205 KB
english, 1979