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InP metal/oxide/semiconductor devices incorporating Al2O3 dielectrics chemically vapour deposited at low pressure
D.C. Cameron, L.D. Irving, G.R. Jones, J. WoodwardVolume:
91
Year:
1982
Language:
english
Pages:
10
DOI:
10.1016/0040-6090(82)90257-7
File:
PDF, 492 KB
english, 1982