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A1N/GaAs structures grown by molecular beam epitaxy for metal/insulator/semiconductor devices
F. Alexandre, J.M. Masson, G. Post, A. ScavennecVolume:
98
Year:
1982
Language:
english
Pages:
6
DOI:
10.1016/0040-6090(82)90629-0
File:
PDF, 305 KB
english, 1982