Evidence of change in crystallization behavior of thin HfO2...

Thin Solid Films 2014 / 04 Vol. 556

Evidence of change in crystallization behavior of thin HfO2 on Si: Effects of self-formed SiO2 capping layer

Shih, Chuan-Feng, Hsiao, Chu-Yun, Hsiao, Yu-Chih, Chen, Bo-Cun, Leu, Ching-Chich
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Volume:
556
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2014.01.023
Date:
April, 2014
File:
PDF, 439 KB
english, 2014
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