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The formation of buried Si3N4 layers in silicon by high dose nitrogen ion implantation
U. Kreissig, W. Skorupa, E. HenselVolume:
100
Year:
1983
Language:
english
Pages:
1
DOI:
10.1016/0040-6090(83)90284-5
File:
PDF, 177 KB
english, 1983