Electrical properties of phosphorus-doped polycrystalline...

Thin Solid Films 1983 Vol. 103; Iss. 1-3

Electrical properties of phosphorus-doped polycrystalline silicon films contaminated with oxygen

R Angelucci, M Severi, S Solmi, L Baldi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
103
Year:
1983
Language:
english
Pages:
7
DOI:
10.1016/0040-6090(83)90444-3
File:
PDF, 368 KB
english, 1983
Conversion to is in progress
Conversion to is failed