Etch rate behaviour of SiO2 films chemically vapour...

Thin Solid Films 1984 Vol. 114; Iss. 3

Etch rate behaviour of SiO2 films chemically vapour deposited from silane, oxygen and nitrogen gas mixtures at low temperatures

C. Pavelescu, C. Cobianu, L. Condriuc, E. Segal
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Volume:
114
Year:
1984
Language:
english
Pages:
4
DOI:
10.1016/0040-6090(84)90126-3
File:
PDF, 249 KB
english, 1984
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