Electron mobility extraction in triangular gate-all-around...

Solid-State Electronics 2014 / 08 Vol. 98

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm

Najmzadeh, Mohammad, Berthomé, Matthieu, Sallese, Jean-Michel, Grabinski, Wladek, Ionescu, Adrian M.
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Volume:
98
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.04.007
Date:
August, 2014
File:
PDF, 1.36 MB
english, 2014
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