Molecular beam epitaxial growth of germanium and silicon...

Molecular beam epitaxial growth of germanium and silicon films: Surface structure, film defects and properties

A.V. Rzhanov, S.I. Stenin, O.P. Pchelyakov, B.Z. Kanter
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Volume:
139
Year:
1986
Language:
english
Pages:
7
DOI:
10.1016/0040-6090(86)90335-4
File:
PDF, 446 KB
english, 1986
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