Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies: X-ray photoelectron spectroscopy, tunable electron energy loss spectroscopy and Auger electron spectroscopy
M. Iwami, Y. Watanabe, H. Kato, M. Nakayama, N. SanoVolume:
146
Year:
1987
Language:
english
Pages:
7
DOI:
10.1016/0040-6090(87)90436-6
File:
PDF, 364 KB
english, 1987