Effect of n+-polycrystalline silicon gate rapid thermal annealing on the electrical properties of the gate oxide
J. Korec, A. Steffen, G.K. McGinty, P. BalkVolume:
162
Year:
1988
Language:
english
Pages:
8
DOI:
10.1016/0040-6090(88)90189-7
File:
PDF, 415 KB
english, 1988