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0.8 μm wavelength integrated photoreceiver: improvement using a special hetero-epitaxy suitable for high electron mobility transistor fabrication
J.P. Gouy, J.P. Vilcot, J.L. Lorriaux, L. Raczy, D. DecosterVolume:
172
Year:
1989
Language:
english
Pages:
1
DOI:
10.1016/0040-6090(89)90128-4
File:
PDF, 260 KB
english, 1989