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The influence of structural defects and concentration inhomogeneities in epitaxial gallium arsenide on the electrical characteristics of impact ionization avalanche transit time diodes
R.V. Konakova, Yu.M. ShvartsVolume:
78
Year:
1989
Language:
english
Pages:
4
DOI:
10.1016/0040-6090(89)90584-1
File:
PDF, 388 KB
english, 1989