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Structural and technological properties of heavily in situ phosphorus-doped low pressure chemically vapour deposited silicon films
D. Bielle-Daspet, L. Mercadere, M. Boukezzata, B. Pieraggi, B. de MauduitVolume:
175
Year:
1989
Language:
english
Pages:
6
DOI:
10.1016/0040-6090(89)90806-7
File:
PDF, 1.17 MB
english, 1989