Determination of the depth distribution of carriers in silicon molecular beam epitaxially grown material by electrochemical capacitance-voltage measurements
Song Kechang, J.-M. Baribeau, D.C. Houghton, J.A. JackmanVolume:
184
Year:
1990
Language:
english
Pages:
8
DOI:
10.1016/0040-6090(90)90396-u
File:
PDF, 415 KB
english, 1990