Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As
N.L. Rowell, D.C. Houghton, J.-P. Noël, J.E. GreeneVolume:
184
Year:
1990
Language:
english
Pages:
6
DOI:
10.1016/0040-6090(90)90399-x
File:
PDF, 330 KB
english, 1990