Narrow band gap base heterojunction bipolar transistors using SiGe alloys
S.S. Iyer, G.L. Patton, D.L. Harame, J.M.C. Stork, E.F. Crabbé, B.S. MeyersonVolume:
184
Year:
1990
Language:
english
Pages:
10
DOI:
10.1016/0040-6090(90)90409-7
File:
PDF, 644 KB
english, 1990