Growth of oxygen-doped silicon epitaxial films by...

Growth of oxygen-doped silicon epitaxial films by co-evaporation of silicon and SiO in a molecular beam epitaxial system

Wei-Xin Ni, György Radnoczi, Göran V. Hansson
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Volume:
184
Year:
1990
Language:
english
Pages:
12
DOI:
10.1016/0040-6090(90)90438-j
File:
PDF, 830 KB
english, 1990
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