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Low energy electron diffraction, Auger and energy loss spectroscopic study of the initial stages of growth by molecular beam epitaxy of GaAs on Si(211) substrates
L. Fotiadis, R. KaplanVolume:
184
Year:
1990
Language:
english
Pages:
8
DOI:
10.1016/0040-6090(90)90439-k
File:
PDF, 405 KB
english, 1990