Etch rate behaviour of SiO2 films chemically vapour...

Thin Solid Films 1990 Vol. 192; Iss. 1

Etch rate behaviour of SiO2 films chemically vapour deposited at low temperatures in TEOSO2N2 system

Irina Kleps, Cristian Pavelescu
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Volume:
192
Year:
1990
Language:
english
Pages:
1
DOI:
10.1016/0040-6090(90)90493-w
File:
PDF, 220 KB
english, 1990
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