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Molecular beam epitaxy grown Si/Si0.87Ge0.13 heterojunction bipolar transistors with ideal I–V characteristics
D.J. Gravesteijn, A. Pruijmboom, W.J. Kersten, J.M.L. van Rooij-Mulder, A.H. Reader, J. SlotboomVolume:
222
Year:
1992
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(92)90053-e
File:
PDF, 352 KB
english, 1992