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Grafting of oxidized silicon nitride insulator for the preparation of ion-sensitive field effect transistor monolayer membranes
H. Perrot, N. Jaffrezic-Renault, A. Gagnaire, J.L. Duvault, G. Hollinger, N.F. de Rooij, G. Racine, S. Jeanneret, A. MaarefVolume:
214
Year:
1992
Language:
english
Pages:
6
DOI:
10.1016/0040-6090(92)90464-m
File:
PDF, 460 KB
english, 1992