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High frequency C-V investigation of metal-oxide-semiconductor capacitors prepared by low temperature subatmospheric pressure chemical vapour deposition of SiO2 films on silicon substrates
C. Pavelescu, J.P. McVittie, C. Chang, K.C. Saraswat, J.Y. LeongVolume:
217
Year:
1992
Language:
english
Pages:
7
DOI:
10.1016/0040-6090(92)90607-d
File:
PDF, 593 KB
english, 1992