Dielectric breakdown properties of Ta2O5SiO2 stacked thin...

Dielectric breakdown properties of Ta2O5SiO2 stacked thin films prepared by r.f. sputtering

Ken-ichi Onisawa, Yoshio Abe, Takahiro Nakayama, Moriaki Fuyama, Yoshimasa A. Ono
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Volume:
221
Year:
1992
Language:
english
Pages:
4
DOI:
10.1016/0040-6090(92)90818-v
File:
PDF, 336 KB
english, 1992
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