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In situ ellipsometric control of Si1−xGexSi heterostructures grown by chemical beam epitaxy
P. Boucaud, F. Glowacki, F. Ferrieu, A. Larré, A. Perio, D. BensahelVolume:
248
Year:
1994
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(94)90201-1
File:
PDF, 545 KB
english, 1994