Preparation of Si1−xGex thin crystalline films by pulsed...

Thin Solid Films 1994 Vol. 241; Iss. 1-2

Preparation of Si1−xGex thin crystalline films by pulsed excimer laser annealing of heavily Ge implanted Si

F. Repplinger, E. Fogarassy, A. Grob, J.J. Grob, D. Muller, B. Prévot, J.P. Stoquert, S. De Unamuno
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Volume:
241
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0040-6090(94)90417-0
File:
PDF, 374 KB
english, 1994
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