Electroluminescence of heavily doped p-type porous silicon...

Thin Solid Films 1995 Vol. 263; Iss. 2

Electroluminescence of heavily doped p-type porous silicon under electrochemical oxidation in the potentiostatic regime

S. Billat, F. Gaspard, R. Hérino, M. Ligeon, F. Muller, F. Romestain, J.C. Vial
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Volume:
263
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(95)06579-2
File:
PDF, 507 KB
english, 1995
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