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Nanometer scale p-type Schottky barrier metal–oxide-semiconductor field-effect transistor using platinum silicidation through oxide technique combined with two-step annealing process
Yun, Hyung-Joong, Jang, Moongyu, Choi, Sung-Jin, Lee, Young-Boo, Ahn, Kwang-Soon, Choi, Chel-JongVolume:
563
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2013.02.099
Date:
June, 2013
File:
PDF, 822 KB
english, 2013