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In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
Zhang, Xingui, Guo, Hua Xin, Zhu, Zhu, Gong, Xiao, Yeo, Yee-ChiaVolume:
84
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.02.009
Date:
June, 2013
File:
PDF, 1.94 MB
english, 2013