![](/img/cover-not-exists.png)
Properties of HfO2/ultrathin SiO2/Si structures and their comparison with Si MOS structures passivated in KCN solution
Pinčík, Emil, Kobayashi, Hikaru, Matsumoto, Taketoshi, Takahashi, Masao, Mikula, Milan, Brunner, RóbertVolume:
301
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2014.01.113
Date:
May, 2014
File:
PDF, 677 KB
english, 2014