Characterization of energy levels related to impurities in...

Diamond and Related Materials 2007 / 1 Vol. 16; Iss. 1

Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p+n junctions

Menichelli, David, Scaringella, Monica, Moscatelli, Francesco, Bruzzi, Mara, Nipoti, Roberta
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Volume:
16
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2006.03.008
Date:
January, 2007
File:
PDF, 253 KB
english, 2007
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