AlN as passivation for surface channel FETs on H-terminated...

Diamond and Related Materials 2010 / 7 Vol. 19; Iss. 7-9

AlN as passivation for surface channel FETs on H-terminated diamond

Kueck, D., Leber, P., Schmidt, A., Speranza, G., Kohn, E.
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Volume:
19
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2010.02.026
Date:
July, 2010
File:
PDF, 472 KB
english, 2010
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