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pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy
Mohd Yusoff, M.Z., Hassan, Z., Ahmed, Naser M., Abu Hassan, H., Abdullah, M.J., Rashid, M.Volume:
16
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2013.07.015
Date:
December, 2013
File:
PDF, 852 KB
english, 2013