Moisture requirements to reduce interfacial sub-oxides and...

Journal of Crystal Growth 2013 / 10 Vol. 381

Moisture requirements to reduce interfacial sub-oxides and lower hydrogen pre-bake temperatures for RPCVD Si epitaxy

Brabant, Paul D., Shinriki, Manabu, Vininski, Joe, Raynor, Mark W., Torres, Robert, Francis, Terry A.
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Volume:
381
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.06.028
Date:
October, 2013
File:
PDF, 831 KB
english, 2013
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